Houlihan, John and Kelleher, C. (2008) Stability properties of current-profiled quantum dot lasers. Optics Communications, 281 (5). pp. 1156-1161. ISSN 00304018
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Abstract
The stability properties of injection-current profiled quantum dot lasers are analyzed for broad area devices of different length. In general, devices demonstrate stable output at low to moderate injection levels before the onset of filamentary dynamics at higher injection levels. By comparing devices of different lengths, the onset of filamentary dynamics is shown to coincide in each case with the onset of excited state lasing and so the loss in stability may be linked to the increased low frequency noise and phase-amplitude coupling that occurs in this regime. (c) 2007 Elsevier B.V. All rights reserved.
| Item Type: | Article |
|---|---|
| Additional Information: | ISI Document Delivery No.: 256XJ Times Cited: 1 Cited Reference Count: 30 Houlihan, John Kelleher, Carmel ELSEVIER SCIENCE BV AMSTERDAM |
| Uncontrolled Keywords: | LINEWIDTH ENHANCEMENT FACTOR AREA SEMICONDUCTOR-LASER PATTERN-FORMATION FIELD PATTERN NEAR-FIELD GAIN FILAMENTATION |
| Departments or Groups: | Optics Research Group |
| Divisions: | School of Science > Department of Computing, Maths and Physics |
| Depositing User: | John Houlihan |
| Date Deposited: | 19 Nov 2012 16:25 |
| Last Modified: | 27 May 2022 13:18 |
| URI: | https://repository.wit.ie/id/eprint/1901 |
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