Recovery time scales in a reversed-biased quantum dot absorber

Viktorov, E. A. and Erneux, T. and Mandel, P. and Piwonski, T. and Madden, G. and Pulka, J. and Huyet, G. and Houlihan, J. (2009) Recovery time scales in a reversed-biased quantum dot absorber. Applied Physics Letters, 94 (26). p. 3.

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Abstract

The nonlinear recovery of quantum dot based reverse-biased waveguide absorbers is investigated both experimentally and analytically. We show that the recovery dynamics consists of a fast initial layer followed by a relatively slow decay. The fast recovery stage is completely determined by the intradot properties, while the slow stage depends on the escape from the dot to the wetting layer.

Item Type: Article
Additional Information: ISI Document Delivery No.: 466XB Times Cited: 11 Cited Reference Count: 12 Viktorov, Evgeny A. Erneux, Thomas Mandel, Paul Piwonski, Tomasz Madden, Gillian Pulka, Jaroslaw Huyet, Guillaume Houlihan, John AMER INST PHYSICS MELVILLE
Uncontrolled Keywords: gallium arsenide indium compounds nonlinear optics optical fabrication optical waveguides semiconductor quantum dots wetting LOCKED SEMICONDUCTOR-LASERS
Departments or Groups: Optics Research Group
Divisions: School of Science > Department of Computing, Maths and Physics
Depositing User: John Houlihan
Date Deposited: 19 Nov 2012 16:14
Last Modified: 22 Aug 2016 10:26
URI: http://repository.wit.ie/id/eprint/2066

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