<mods:mods version="3.3" xsi:schemaLocation="http://www.loc.gov/mods/v3 http://www.loc.gov/standards/mods/v3/mods-3-3.xsd" xmlns:mods="http://www.loc.gov/mods/v3" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance"><mods:titleInfo><mods:title>Refractive index dynamics of InAs/GaAs quantum dots</mods:title></mods:titleInfo><mods:name type="personal"><mods:namePart type="given">John</mods:namePart><mods:namePart type="family">Houlihan</mods:namePart><mods:role><mods:roleTerm type="text">author</mods:roleTerm></mods:role></mods:name><mods:abstract>The refractive index dynamics of an InAs/InGaAs/GaAs dots-in-a-well semiconductor optical
amplifier is calculated and compared with experimental results. The fast and slow recovery
timescales together with the behaviour with increasing injection are reproduced and explained in
terms of the density of carriers available in upper quantum dot and continuum states. Also, a
Coulomb-mediated shift of the dot susceptibility is suggested as responsible for the fast recovery of
the phase</mods:abstract><mods:classification authority="lcc">Optics Research Group</mods:classification><mods:originInfo><mods:dateIssued encoding="iso8061">2013-07-11</mods:dateIssued></mods:originInfo><mods:genre>Article</mods:genre></mods:mods>