Stability properties of current-profiled quantum dot lasers

Houlihan, J. and Kelleher, C. (2008) Stability properties of current-profiled quantum dot lasers. Optics Communications, 281 (5). pp. 1156-1161.

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Abstract

The stability properties of injection-current profiled quantum dot lasers are analyzed for broad area devices of different length. In general, devices demonstrate stable output at low to moderate injection levels before the onset of filamentary dynamics at higher injection levels. By comparing devices of different lengths, the onset of filamentary dynamics is shown to coincide in each case with the onset of excited state lasing and so the loss in stability may be linked to the increased low frequency noise and phase-amplitude coupling that occurs in this regime. (c) 2007 Elsevier B.V. All rights reserved.

Item Type: Article
Additional Information: ISI Document Delivery No.: 256XJ Times Cited: 1 Cited Reference Count: 30 Houlihan, John Kelleher, Carmel ELSEVIER SCIENCE BV AMSTERDAM
Uncontrolled Keywords: LINEWIDTH ENHANCEMENT FACTOR AREA SEMICONDUCTOR-LASER PATTERN-FORMATION FIELD PATTERN NEAR-FIELD GAIN FILAMENTATION
Departments or Groups: Optics Research Group
Divisions: School of Science > Department of Computing, Maths and Physics
Depositing User: John Houlihan
Date Deposited: 19 Nov 2012 16:25
Last Modified: 22 Aug 2016 10:26
URI: http://repository.wit.ie/id/eprint/1901

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