Electron and hole dynamics of InAs/GaAs quantum dot semiconductor optical amplifiers

O'Driscoll, I. and Piwonski, T. and Schleussner, C. F. and Houlihan, J. and Huyet, G. and Manning, R. J. (2007) Electron and hole dynamics of InAs/GaAs quantum dot semiconductor optical amplifiers. Applied Physics Letters, 91 (7). p. 3.

[img]
Preview
PDF
apl07ii.pdf

Download (193kB) | Preview

Abstract

Single-color and two-color pump-probe measurements are used to analyze carrier dynamics in InAs/GaAs quantum dot amplifiers. The study reveals that hole recovery and intradot electron relaxation occur on a picosecond time scale, while the electron capture time is on the order of 10 ps. A longer time scale of hundreds of picoseconds is associated with carrier recovery in the wetting layer, similar to that observed in quantum well semiconductor amplifiers. (c) 2007 American Institute of Physics.

Item Type: Article
Additional Information: ISI Document Delivery No.: 201XT Times Cited: 28 Cited Reference Count: 13 O'Driscoll, I. Piwonski, T. Schleussner, C.-F. Houlihan, J. Huyet, G. Manning, R. J. AMER INST PHYSICS MELVILLE
Departments or Groups: Optics Research Group
Divisions: School of Science > Department of Computing, Maths and Physics
Depositing User: John Houlihan
Date Deposited: 19 Nov 2012 16:34
Last Modified: 22 Aug 2016 10:26
URI: http://repository.wit.ie/id/eprint/1972

Actions (login required)

View Item View Item