Intradot dynamics of InAs quantum dot based electroabsorbers

Piwonski, T. and Pulka, J. and Madden, G. and Huyet, G. and Houlihan, J. and Viktorov, E. A. and Erneux, T. and Mandel, P. (2009) Intradot dynamics of InAs quantum dot based electroabsorbers. Applied Physics Letters, 94 (12). p. 3.

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Abstract

The carrier relaxation and escape dynamics of InAs/GaAs quantum dot waveguide absorbers is studied using heterodyne pump-probe measurements. Under reverse bias conditions, we reveal differences in intradot relaxation dynamics, related to the initial population of the dots' ground or excited states. These differences can be attributed to phonon-assisted or Auger processes being dominant for initially populated ground or excited states, respectively.

Item Type: Article
Additional Information: ISI Document Delivery No.: 425JT Times Cited: 19 Cited Reference Count: 12 Piwonski, Tomasz Pulka, Jaroslaw Madden, Gillian Huyet, Guillaume Houlihan, John Viktorov, Evgeny A. Erneux, Thomas Mandel, Paul AMER INST PHYSICS MELVILLE
Uncontrolled Keywords: Auger effect carrier relaxation time electroabsorption electro-optical devices excited states gallium arsenide ground states III-V semiconductors indium compounds nonlinear optics optical materials optical waveguides phonons semiconductor quantum dots LASERS
Departments or Groups: Optics Research Group
Divisions: School of Science > Department of Computing, Maths and Physics
Depositing User: John Houlihan
Date Deposited: 19 Nov 2012 16:21
Last Modified: 22 Aug 2016 10:26
URI: http://repository.wit.ie/id/eprint/1999

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