Beam properties of injection profiled quantum dot lasers

Vukkalam, V. and Houlihan, J. (2010) Beam properties of injection profiled quantum dot lasers. Optics Communications, 283 (12). pp. 2596-2602.

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Abstract

The impact of injection current profiling on the spatial mode structure of quantum dot semiconductor lasers is investigated. Numerical simulations based on a spatial extension of a simple rate equation model for quantum dot devices reveal the role of non-resonant carries in the appearance of strong dips in the optical field of the device. Symmetry breaking may also occur whereby the position of the dip shifts from the centre of the injection region. (C) 2010 Elsevier B.V. All rights reserved.

Item Type: Article
Additional Information: ISI Document Delivery No.: 598YU Times Cited: 0 Cited Reference Count: 27 Vukkalam, Vinod Houlihan, John Institute of Technology Ireland's Strand I program The authors would like to acknowledge financial support from the Institute of Technology Ireland's Strand I program and access to QD structures under the Tyndall National Access Program (NAP). ELSEVIER SCIENCE BV AMSTERDAM
Uncontrolled Keywords: LINEWIDTH ENHANCEMENT FACTOR SEMICONDUCTOR-LASERS FIELD PATTERN FILAMENTATION
Departments or Groups: Optics Research Group
Divisions: School of Science > Department of Computing, Maths and Physics
Depositing User: John Houlihan
Date Deposited: 19 Nov 2012 16:16
Last Modified: 22 Aug 2016 10:26
URI: http://repository.wit.ie/id/eprint/2068

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